Product Name: Precision Porous Silicon Carbide Ceramic Sucker
Product Material: High-Purity Porous Silicon Carbide Ceramic
Material Characteristics:
High temperature resistance, Excellent chemical inertness, Adjustable porosity, Good thermal shock resistance, High mechanical strength
Application Fields:
Semiconductor wafer handling, Vacuum adsorption systems, High-temperature processing, Precision manufacturing
Application Industries:
Semiconductor manufacturing, LED production, Solar cell fabrication, Microelectronics assembly
Processing Difficulties:
Precise porosity control, Pore size uniformity, Surface flatness maintenance, Vacuum seal integrity, Thin-wall structure stability
Processing Flow:
Powder preparation → Additive mixing → Forming → Sintering → Precision machining → Surface treatment → Quality inspection → Cleaning → Packaging
Delivery Period:
30-45 days
Key Features:
Controlled Porosity - Adjustable 20-50% porosity for optimal vacuum performance
High Thermal Stability - Withstands 1600°C with minimal expansion
Chemical Resistance - Resists corrosive chemicals and plasma
Mechanical Strength - High hardness and fracture toughness
Precision Surface - Ra ≤0.2μm finish prevents wafer damage
Gas Permeability - Uniform pore distribution for quick response